STUDY OF VALENCE-BAND OFFSETS OF GE ZNS(111) HETEROJUNCTIONS BY SYNCHROTRON-RADIATION PHOTOEMISSION/

Authors
BAN DY YANG FY FANG RC XU SH XU PS MENG XX
Citation
Dy. Ban et al., STUDY OF VALENCE-BAND OFFSETS OF GE ZNS(111) HETEROJUNCTIONS BY SYNCHROTRON-RADIATION PHOTOEMISSION/, Science in China. Series A, Mathematics, Physics, Astronomy & Technological Sciences, 39(6), 1996, pp. 637-646
Citations number
20
Categorie Soggetti
Multidisciplinary Sciences
Journal title
Science in China. Series A, Mathematics, Physics, Astronomy & Technological Sciences → ACNP
ISSN journal
10016511
Volume
39
Issue
6
Year of publication
1996
Pages
637 - 646
Database
ISI
SICI code
1001-6511(1996)39:6<637:SOVOOG>2.0.ZU;2-S
Abstract
The band lineups at Ge/ZnS(111) interfaces have been studied by synchr otron radiation photoemission spectroscopy. Surface sensitive core lev el spectra show that Ge and S atoms react with each other at the inter face. Using both the techniques' of core level and valence band spectr a, the valence band offsets of such a kind of heterojunctions have bee n measured. The values are (1.94+/-0.1) eV and (2.23+/-0.1) eV for the heterojunctions grown at the substrate temperature of 200 degrees C a nd room temperature, respectively. The experimental results are in goo d agreement with some theoretical predictions.