Dy. Ban et al., STUDY OF VALENCE-BAND OFFSETS OF GE ZNS(111) HETEROJUNCTIONS BY SYNCHROTRON-RADIATION PHOTOEMISSION/, Science in China. Series A, Mathematics, Physics, Astronomy & Technological Sciences, 39(6), 1996, pp. 637-646
The band lineups at Ge/ZnS(111) interfaces have been studied by synchr
otron radiation photoemission spectroscopy. Surface sensitive core lev
el spectra show that Ge and S atoms react with each other at the inter
face. Using both the techniques' of core level and valence band spectr
a, the valence band offsets of such a kind of heterojunctions have bee
n measured. The values are (1.94+/-0.1) eV and (2.23+/-0.1) eV for the
heterojunctions grown at the substrate temperature of 200 degrees C a
nd room temperature, respectively. The experimental results are in goo
d agreement with some theoretical predictions.