ON THE NATURE OF DEEP DONORS CREATED AT 450-DEGREES-C IN BORON-DOPED P-SI

Authors
BABICH VM BARAN NP VALAKH MY KIRITSA VL RUDKO GY
Citation
Vm. Babich et al., ON THE NATURE OF DEEP DONORS CREATED AT 450-DEGREES-C IN BORON-DOPED P-SI, Physica status solidi. a, Applied research, 157(2), 1996, pp. 405-410
Citations number
17
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. a, Applied research → ACNP
ISSN journal
00318965
Volume
157
Issue
2
Year of publication
1996
Pages
405 - 410
Database
ISI
SICI code
0031-8965(1996)157:2<405:OTNODD>2.0.ZU;2-Y
Abstract
It is shown that the boron impurity in oxygen-rich p-Si is involved in the formation of electrically active complexes: namely, deep thermal donors, during thermal annealing at T = 450 degrees C. The conclusion is based on experimental results obtained by several techniques such a s Hall measurements, electron spin resonance, and photoluminescence.