OBSERVATION OF POINT-DEFECT PRODUCTION AND CLUSTERING BY HIGH-VOLTAGEELECTRON-MICROSCOPY - INTERACTION OF POINT-DEFECT WITH SOLUTES

Citation
H. Takahashi et al., OBSERVATION OF POINT-DEFECT PRODUCTION AND CLUSTERING BY HIGH-VOLTAGEELECTRON-MICROSCOPY - INTERACTION OF POINT-DEFECT WITH SOLUTES, Micron, 27(3-4), 1996, pp. 239-246
Citations number
46
Categorie Soggetti
Microscopy
Journal title
MicronACNP
ISSN journal
09684328
Volume
27
Issue
3-4
Year of publication
1996
Pages
239 - 246
Database
ISI
SICI code
0968-4328(1996)27:3-4<239:OOPPAC>2.0.ZU;2-F
Abstract
Excess point defects are generated in metals during irradiation by hig h energy particles such as electrons, ions and neutrons. Especially in the case of electron irradiation, the only point defects introduced a re vacancies and interstitials. These defects develop to form defect c lusters of dislocations, stacking faults and voids; when solutes atoms or impurities are contained in metals, the defects interact with the solutes and the defect clustering process is often modified. For the o bservation of these defect clustering processes and fundamental analys is of defect behaviour, high voltage electron microscopy (HVEM) is uti lized; it provides advantages such as strong irradiation intensity wit h a focussed electron beam, easy control of electron energy, and easy control of temperature during in situ observation. This paper reviews the clustering process of point defects and the interaction of point d efects with solute atoms and/or impurities; we concentrate the effect of helium atoms on defect clustering under electron irradiation in HVE M. Copyright (C) 1996 Elsevier Science Ltd.