A COMPARISON OF ELECTROSTATIC DISCHARGE MODELS AND FAILURE SIGNATURESFOR CMOS INTEGRATED-CIRCUIT DEVICES

Six different CMOS device codes were evaluated, according to available lest standards, for electrostatic discharge (ESD) sensitivity using t hree ESD models: human body model (HBM). machine model (MM), and field -induced charged device model (FCDM). Four commercially available simu lators were used: two to perform the HBM ESD evaluations and two to pe rform the MM ESD evaluations. FCDM stressing was performed using an AT &T designed simulator. The failure threshold voltage and failure signa ture associated with each ESD model and simulator were determined for each test sample. Threshold correlation and regression analyses were a lso performed. Though the three ESD models and simulators created mult iple failure signatures, they do not exhibit a high degree of overlap. Our results will show a high correlation between the ESD thresholds, failing pins, failing circuitry, and failing structures for HBM and MM stressing of the device codes evaluated.