LOW-PERMITTIVITY EVAPORATED POLYMER-POLYIMIDE

The development of modern microelectronics produces a need to develop materials with a relative dielectric constant epsilon(r), lower than t hat of silicon dioxide for intermetal applications. Lower permittiviti es mean lower capacitances and therefore shorter RC delay, faster devi ce speeds, less crosstalk and less power dissipation. A promising ''ta ilor made'' candidate is the evaporated polymer-polyimide. The dielect ric properties of evaporated polyimide layers (ODA-PMDA) are investiga ted. Three thicknesses of the layers are used - 1100, 190 and 170 nm. The electrical properties of the layers are evaluated on capacitors of different areas using C-V and I-V measurements. The lowest values of the relative dielectric constant epsilon(r) and the loss-tangent t(g) delta obtained are 2.67 and 0.0021, respectively. Copyright (C) 1996 E lsevier Science Ltd