METAL-INSULATOR-TRANSITION AND GIANT NEGATIVE MAGNETORESISTANCE IN AMORPHOUS MAGNETIC RARE-EARTH SILICON ALLOYS

Citation
F. Hellman et al., METAL-INSULATOR-TRANSITION AND GIANT NEGATIVE MAGNETORESISTANCE IN AMORPHOUS MAGNETIC RARE-EARTH SILICON ALLOYS, Physical review letters, 77(22), 1996, pp. 4652-4655
Citations number
15
Categorie Soggetti
Physics
Journal title
ISSN journal
00319007
Volume
77
Issue
22
Year of publication
1996
Pages
4652 - 4655
Database
ISI
SICI code
0031-9007(1996)77:22<4652:MAGNMI>2.0.ZU;2-H
Abstract
Large negative magnetoresistance and anomalous magnetic properties are found in amorphous Si doped with magnetic rare earth ions near the me tal-insulator transition. The resistivity below 50 K rises orders of m agnitude above that of comparable composition nonmagnetic alloys and i s strongly reduced by a magnetic field. Magnetization measurements sho w noninteracting moments at high temperature which develop antiferroma gnetic interactions below 50 K. We suggest that these results are due to formation below 50 K of a dense concentration of magnetic polarons which localize conduction electrons.