THERMIONIC FIELD-EMISSION IN P-BARRIER ENHANCED INP INGAAS/INP HEMTS/

Authors
SCHIMPF K HORSTMANN M HARDTDEGEN H MARSO M KORDOS P
Citation
K. Schimpf et al., THERMIONIC FIELD-EMISSION IN P-BARRIER ENHANCED INP INGAAS/INP HEMTS/, Electronics Letters, 32(23), 1996, pp. 2132-2134
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
23
Year of publication
1996
Pages
2132 - 2134
Database
ISI
SICI code
0013-5194(1996)32:23<2132:TFIPEI>2.0.ZU;2-9
Abstract
A model for thermionic field emission in p-barrier enhanced InP HEMTs is presented indicating that a reduction in the gate leakage of those devices is related to an increase in effective barrier thickness. Good agreement between this model and our experimental data is obtained.