MONOLITHIC PIN-HEMT 1.55-MU-M PHOTORECEIVER ON INP WITH 27 GHZ BANDWIDTH

Authors
UMBACH A VANWAASEN S AUER U BACH HG BERTENBURG RM BREUER V EBERT W JANSSEN G MEKONNEN GG PASSENBERG W SCHLAAK W SCHRAMM C SEEGER A TEGUDE FJ UNTERBORSCH G
Citation
A. Umbach et al., MONOLITHIC PIN-HEMT 1.55-MU-M PHOTORECEIVER ON INP WITH 27 GHZ BANDWIDTH, Electronics Letters, 32(23), 1996, pp. 2142-2143
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
23
Year of publication
1996
Pages
2142 - 2143
Database
ISI
SICI code
0013-5194(1996)32:23<2142:MP1POI>2.0.ZU;2-R
Abstract
A monolithically integrated photoreceiver is presented, based on a new integration concept comprising a waveguide integrated photodiode and a travelling wave GaInAs/AlInAs-HEMT amplifier. A record 3 dB bandwidt h of 27 GHz is measured and a clearly open eye is obtained for a 20 Gb it/s pseudo-random bit stream. This high speed performance was achieve d with photolithographically defined 0.7 mu m gate length HEMTs, regro wn by MBE on semi-insulating GaInAsP waveguide layers.