Evanescently coupled, waveguide integrated photodiodes were fabricated
on InP. The device design is intendd to provide ultrafast photorespon
se together with a high responsivity. A 3 dB bandwidth of 45 GHz and 9
0% internal quantum efficiency is achieved at 1.55 mu m wavelength. Hi
gh-speed operation with linear power response is obtained at power lev
els as high as 5 mW.