PHOTOEMISSION SPECTROSCOPY STUDIES OF THE SURFACE OF GAN FILMS GROWN BY VAPOR-PHASE EPITAXY

Authors
MA J GARNI B PERKINS N OBRIEN WL KUECH TF LAGALLY MG
Citation
J. Ma et al., PHOTOEMISSION SPECTROSCOPY STUDIES OF THE SURFACE OF GAN FILMS GROWN BY VAPOR-PHASE EPITAXY, Applied physics letters, 69(22), 1996, pp. 3351-3353
Citations number
24
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
69
Issue
22
Year of publication
1996
Pages
3351 - 3353
Database
ISI
SICI code
0003-6951(1996)69:22<3351:PSSOTS>2.0.ZU;2-F
Abstract
Surfaces of GaN films have been investigated with photoemission spectr oscopy. The measured valence band is in good agreement with band struc ture calculations and correlates well with tunneling luminescence meas urements performed on the same samples. The effect of N depletion on b and structure is explored, clarifying disagreements in previous photoe mission measurements. (C) 1996 American Institute of Physics.