J. Ma et al., PHOTOEMISSION SPECTROSCOPY STUDIES OF THE SURFACE OF GAN FILMS GROWN BY VAPOR-PHASE EPITAXY, Applied physics letters, 69(22), 1996, pp. 3351-3353
Surfaces of GaN films have been investigated with photoemission spectr
oscopy. The measured valence band is in good agreement with band struc
ture calculations and correlates well with tunneling luminescence meas
urements performed on the same samples. The effect of N depletion on b
and structure is explored, clarifying disagreements in previous photoe
mission measurements. (C) 1996 American Institute of Physics.