INFLUENCE OF REDISTRIBUTION OF ELECTRONS IN THE CONDUCTION-BAND ON THE LATTICE-PARAMETERS OF ALXGA1-XAS

Authors
BAKMISIUK J LESZCZYNSKI M PASZKOWICZ W DOMAGALA J
Citation
J. Bakmisiuk et al., INFLUENCE OF REDISTRIBUTION OF ELECTRONS IN THE CONDUCTION-BAND ON THE LATTICE-PARAMETERS OF ALXGA1-XAS, Applied physics letters, 69(22), 1996, pp. 3366-3368
Citations number
20
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
69
Issue
22
Year of publication
1996
Pages
3366 - 3368
Database
ISI
SICI code
0003-6951(1996)69:22<3366:IOROEI>2.0.ZU;2-Z
Abstract
Lattice parameters of GaAs layers were measured using the Bond method. For samples heavily doped with S and Se, we observed an increase of l attice parameters with respect to the undoped samples. The results are compared with those observed for AlxGa1-xAs:S (Wagner et al.)(12) and both are explained by the influence of free electrons and their redis tribution in the conduction band. For Al0.39Ga0.61As, the following va lues of deformation potentials of the conduction-band minima were obta ined: D-Gamma = - 6.7 eV, D-L = 1.4 eV, and D-X = 1 eV. (C) 1996 Ameri can Institute of Physics.