RED LUMINESCENCE FROM STRAIN-INDUCED GAINP QUANTUM DOTS

The strain of self-organized InP islands is used to induced quantum do ts in near-surface GaInP/AlGaInP quantum wells. To obtain quantum dot luminescence in a widely tunable wavelength range of 630-700 nm, the c omposition and thickness of the GaInP quantum well is varied. The effe ct of different cap layer materials, i.e., GaAs, AlGaAs, GaInP, and Al GaInP on the InP island formation and quantum dot luminescence propert ies is investigated. The luminescence intensity ratio of the quantum d ot peak to the quantum well peak is found to be highest when a GaAs ca p is used. (C) 1996 American Institute of Physics.