RESONANT MAGNETOTUNNELING THROUGH INDIVIDUAL SELF-ASSEMBLED INAS QUANTUM DOTS

Resonant peaks are observed in the low-temperature current-voltage I(V ) characteristics of a single-barrier GaAs/AlAs/GaAs diode with InAs q uantum dots incorporated in the AlAs tunnel barrier. We argue that eac h peak arises from single-electron tunneling through a discrete zero-d imensional state of an individual InAs dot in the barrier. Each peak s plits into sharp components for magnetic field B parallel to I; the I( V) curve probes the density of Landau-quantized states in the emitter- accumulation layer. A dot size of approximate to 10 nm was estimated f rom the diamagnetic peak shift for B perpendicular to I.