The quantum-confined Stark effect (QCSE) in Zn1-xCdxSe/ZnSe multiple q
uantum wells embedded in the intrinsic region of p-i-n photodiodes has
been investigated by means of photoluminescence spectroscopy under ap
plied bias and photocurrent spectroscopy. Room-temperature excitonic b
leaching is observed at reverse biases as low as 3 V. Both the redshif
t and the reduction of the oscillator strength of the excitonic emissi
on have bean calculated by means of a variational model. We use the sa
me model to clarify the main specific features of the QCSE in II-VI ma
terials.