GROWTH AND ELECTRONIC-STRUCTURE OF THIN EPITAXIAL PD AND CO FILMS ON W(100)

Citation
H. Wormeester et al., GROWTH AND ELECTRONIC-STRUCTURE OF THIN EPITAXIAL PD AND CO FILMS ON W(100), Physical review. B, Condensed matter, 54(23), 1996, pp. 17108-17117
Citations number
27
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
54
Issue
23
Year of publication
1996
Pages
17108 - 17117
Database
ISI
SICI code
0163-1829(1996)54:23<17108:GAEOTE>2.0.ZU;2-H
Abstract
Pd and Co films deposited on a W(100) surface were studied with reflec tion high-energy electron diffraction, Auger electron spectroscopy, an d ultraviolet photoemission spectroscopy. The films grow initially pse udomorphic. At a critical coverage of 2.4 ML suddenly (<11(2)over bar 0>) oriented hcp islands form. These hcp islands have a pronounced nar row valence-band feature close to the Fermi edge, which can cause ferr omagnetism. At elevated temperatures the islands become very large and three-dimensional alloying occurs above 600 K for Pd and 400 K for Co . In Pd films are interface alloy forms around 500 K.