LARGE SINGLE-CRYSTAL GROWTH AND CHARACTERIZATION OF THE NARROW-GAP SEMICONDUCTOR TLBIS2

Authors
OZER M PARASKEVOPOULOS KM ANAGNOSTOPOULOS AN KOKOU S POLYCHRONIADIS EK
Citation
M. Ozer et al., LARGE SINGLE-CRYSTAL GROWTH AND CHARACTERIZATION OF THE NARROW-GAP SEMICONDUCTOR TLBIS2, Semiconductor science and technology, 11(10), 1996, pp. 1405-1410
Citations number
32
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
11
Issue
10
Year of publication
1996
Pages
1405 - 1410
Database
ISI
SICI code
0268-1242(1996)11:10<1405:LSGACO>2.0.ZU;2-Y
Abstract
TlBiS2 is a narrow-gap semiconductor with a layered structure, isoelec tronically analogous to PbS. Large single crystals were grown by the B ridgman-Stockbarger method from the melt and characterized by x-ray di ffraction. The lattice parameters were determined and the discrepancy between those already reported was removed. From IR reflectivity measu rements in the plasma region, the number of carriers was calculated. A lso a strong anisotropy of the electrical conductivity was detected an d the narrow-gap character of the material was supported by electrical measurements in the range of 10-300 K.