MODIFICATION OF FANO RESONANCES BY RESONANT POLARON COUPLING IN BULK GAAS

Citation
V. Bellani et al., MODIFICATION OF FANO RESONANCES BY RESONANT POLARON COUPLING IN BULK GAAS, Semiconductor science and technology, 11(10), 1996, pp. 1411-1415
Citations number
20
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
ISSN journal
02681242
Volume
11
Issue
10
Year of publication
1996
Pages
1411 - 1415
Database
ISI
SICI code
0268-1242(1996)11:10<1411:MOFRBR>2.0.ZU;2-P
Abstract
Strong modifications of the magneto-excitonic Fano lineshapes have bee n observed in the photoluminescence-excitation spectra of bulk GaAs wh en the energies of the transitions are tuned by an external magnetic f ield. We identify the origin of these changes as resonant polaronic co upling between the electrons or holes, forming the excitons, with long itudinal-optical phonons, in conduction and valence bands respectively . The resonant polaron effect alters the magneto-excitonic discrete st ates, destroying the quantum interferences responsible for the Fano as ymmetry.