V. Bellani et al., MODIFICATION OF FANO RESONANCES BY RESONANT POLARON COUPLING IN BULK GAAS, Semiconductor science and technology, 11(10), 1996, pp. 1411-1415
Strong modifications of the magneto-excitonic Fano lineshapes have bee
n observed in the photoluminescence-excitation spectra of bulk GaAs wh
en the energies of the transitions are tuned by an external magnetic f
ield. We identify the origin of these changes as resonant polaronic co
upling between the electrons or holes, forming the excitons, with long
itudinal-optical phonons, in conduction and valence bands respectively
. The resonant polaron effect alters the magneto-excitonic discrete st
ates, destroying the quantum interferences responsible for the Fano as
ymmetry.