OPTICALLY DETECTED SPIN-RESONANCE OF CONDUCTION-BAND ELECTRONS IN INGAAS INP QUANTUM-WELLS/

Authors
KOWALSKI B OMLING P MEYER BK HOFMANN DM HARLE V SCHOLZ F SOBKOWICZ P
Citation
B. Kowalski et al., OPTICALLY DETECTED SPIN-RESONANCE OF CONDUCTION-BAND ELECTRONS IN INGAAS INP QUANTUM-WELLS/, Semiconductor science and technology, 11(10), 1996, pp. 1416-1423
Citations number
39
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
11
Issue
10
Year of publication
1996
Pages
1416 - 1423
Database
ISI
SICI code
0268-1242(1996)11:10<1416:ODSOCE>2.0.ZU;2-B
Abstract
Optically detected spin resonance was used to measure the effective g- value (g) of electrons at the conduction band minimum in type-I In(0. 53)Ga(0.4)7As/InP quantum wells. The experiments showed that the spin resonance is induced by electric dipole transitions, and hence is not limited by the short carrier lifetime that renders magnetic dipole tra nsitions impossible. The spin splittings obtained are strongly anisotr opic and dependent on quantum well thickness. A calculation without ad justable parameters, using a three-band Kane model, agrees with the ex perimental data. The bulk effective g-value of In0.53Ga0.47As used in this calculation was measured on a thick sample.