STUDY OF A NOVEL LASER-DIODE AMPLIFIER STRUCTURE

Authors
GHAFOURISHIRAZ H TAN PW
Citation
H. Ghafourishiraz et Pw. Tan, STUDY OF A NOVEL LASER-DIODE AMPLIFIER STRUCTURE, Semiconductor science and technology, 11(10), 1996, pp. 1443-1449
Citations number
23
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
11
Issue
10
Year of publication
1996
Pages
1443 - 1449
Database
ISI
SICI code
0268-1242(1996)11:10<1443:SOANLA>2.0.ZU;2-T
Abstract
A new semiconductor laser diode amplifier structure which consists of a semiexponential-linear tapered waveguide active layer has been propo sed to improve the saturation output power. Various characteristic per formances of this device have been analysed based on the step-transiti on approach taking into account the effects of the spatial distributio ns of the carrier density and the optical field. The effects of variou s tapered structures on the gain saturation, intensity distribution an d amplified spontaneous emission noise have also been investigated.