ELECTRICAL-CONDUCTIVITY, OPTICAL-ABSORPTION AND STRUCTURAL STUDIES INAGINSE2 THIN-FILMS

Electrical, optical and structural properties of AgInSe2 thin films de posited on glass substrates are studied for different substrate and po st-deposition annealing temperatures. The substrate temperature is var ied in the range 300-773 K. The activation energy (E(A)) has been calc ulated for the films using the Arrhenius plot and the bandgap (E(g)) h as been obtained from the optical transmission spectra. The activation energy varied from 76 meV to 330 meV for E(A1) in the impurity scatte ring region and for E(A2) the value is around 700 meV in the intrinsic region. Optical absorption spectra show variation in the bandgap, var ying from 1.18 to 1.42 eV as the substrate temperature varied from 300 -773 K. Films deposited at higher substrate temperatures give a = 5.93 Angstrom and c = 11.22 Angstrom for the tetragonal phase. The mean gr ain size of the films is 0.2 mu m for polycrystalline films.