ELECTRON AND HOLE CAPTURE KINETICS AT GOLD-HYDROGEN COMPLEXES IN N-TYPE SILICON

The capture kinetics of both electrons and holes at gold-hydrogen-rela ted deep levels have been studied in n-type silicon using the techniqu es of deep-level transient spectroscopy (DLTS) and the related techniq ue of minority carrier transient spectroscopy (MCTS). Four deep levels are observed in the bandgap, labelled G1 to G4. G1 and G4 are electro n levels, and G2 and G3 are hole levels detected by MCTS that have pre viously been reported for gold-hydrogen complexes in p-type silicon. T he combination of DLTS and MCTS in single-measurement techniques has e nabled analysis of the carrier recombination processes occurring at th e various deep levels by measuring the majority and minority carrier c apture cross sections of each deep level. Based on this, it is propose d that a single type of Au-H defect is responsible for three of the ob served levels, G1, G2 and G4, with the defect having a single donor (G 2), and both single-(G4) and double-acceptor (G1) charge states. G3 is found to be a combination of two closely spaced levels with similar h ole capture cross sections but different values of electron capture cr oss section.