AMORPHOUS (100) PLATELET FORMATION IN (100)SI INDUCED BY HYDROGEN PLASMA TREATMENT

The defect formation in (100) Si at low temperatures during electron c yclotron resonance hydrogen plasma treatment has been studied. The tem perature effect on crystalline defect morphology is studied by transmi ssion electron microscopy and high resolution transmission electron mi croscopy. A high density of hydrogen-stabilized {111} platelets is obs erved at 240 degrees C, whereas a large number of amorphous {100} plat elets is observed at 385 degrees C. The formation of amorphous {100} p latelets without {111} platelets at 385 degrees C is reported. The amo rphous {100} platelet at 385 degrees C results from the precipitation of oxygen promoted by hydrogen-enhanced oxygen diffusion. The low-temp erature photoluminescence study and the spreading resistance profiles fur the hydrogenated Si support the proposed mechanism of the amorphou s {100} platelet. (C) 1997 American Institute of Physics.