Ss. De et al., INFLUENCE OF BUILT-IN POTENTIAL ON THE EFFECTIVE SURFACE RECOMBINATION VELOCITY FOR A HEAVILY-DOPED HIGH-LOW JUNCTION, Physica. B, Condensed matter, 228(3-4), 1996, pp. 363-368
An analytical expression for the built-in potential in a heavily doped
high-low (p(+)-p) junction has been derived. The magnitude of built-i
n potential at different values of dopant density is estimated numeric
ally. Band gap narrowing, carrier degeneracy, dopant density-dependent
dielectric constant and also effects of carrier lifetime across the j
unction are considered in the analysis. The variation of surface recom
bination velocity with dopant density has been shown graphically throu
gh numerical analysis, where the variation of built-in potentials is i
ncorporated.