INFLUENCE OF BUILT-IN POTENTIAL ON THE EFFECTIVE SURFACE RECOMBINATION VELOCITY FOR A HEAVILY-DOPED HIGH-LOW JUNCTION

An analytical expression for the built-in potential in a heavily doped high-low (p(+)-p) junction has been derived. The magnitude of built-i n potential at different values of dopant density is estimated numeric ally. Band gap narrowing, carrier degeneracy, dopant density-dependent dielectric constant and also effects of carrier lifetime across the j unction are considered in the analysis. The variation of surface recom bination velocity with dopant density has been shown graphically throu gh numerical analysis, where the variation of built-in potentials is i ncorporated.