STUDIES ON SIC FILM DEPOSITED BY PULSED XECL EXCIMER-LASER SPUTTERINGMETHOD

Thin films of SIC were grown by pulsed excimer laser deposition (PLD). The quality and structure of the films were examined by AES, XPS, TEM , SEM, XRD and IR. The deposited films were dense and uniform and stuc k tightly to the substrates. The compositions of the films were quite uniform and the ratio of silicon to carbon atomic in the films was nea rly 1:1, with slight excess carbon. The films contained less than 10% oxide contamination. The basic stage of the chemical valence in the fi lms was the Si-C covalent bond. The valence electrons density in the f ilms was 94.4% of that in single crystal SIG. The structure of the fil ms was the polycrystalline nH-SiC (n = 4, 6 or both) hexagonal system.