DOPANT DEPTH PROFILING BY ANODIC SECTIONING USING 0.1 M HCL ELECTROLYTE

A new procedure for dopant depth profiling by anodic sectioning is pre sented. It consists of using anodic oxidation in aqueous 0.1 M HCl sol ution at constant potential and offers several advantages over the pre viously used procedures for accomplishing the anodic sectioning. Const ant voltage oxidation is insensitive to the sample size, and is highly uniform and very rapid. Removing the electrolyte from the sample is e asy. The amount of Si removed per cycle can be determined accurately a nd is much less than in the traditional technique, indicating that the new procedure is more suitable for ultrashallow implants.