A new room temperature wet chemical digital etching technique for GaAs
is presented which uses hydrogen peroxide and an acid in a two-step e
tching process to remove GaAs in approximately 15 Angstrom increments.
In the first step, GaAs is oxidized by 30% hydrogen peroxide to form
an oxide layer that is diffusion limited to a thickness of 14 to 17 An
gstrom for time periods from 15 to 120 s. The second step removes this
oxide layer with an acid that does not attack unoxidized GaAs. These
steps are repeated in succession until the desired etch depth is obtai
ned. Experimental results are presented for this digital etching techn
ique demonstrating the etch rate and process invariability with respec
t to hydrogen peroxide and acid exposure times.