GENERATION OF SI-SIO2 INTERFACE STATES AT SURFACE-POTENTIALS NEAR 0.4AND 0.7 EV

Si-SiO2 interface-state density was extensively examined for metal-oxi de-silicon structures subjected to various kinds of stresses, includin g bias temperature aging,hot carrier injection, and radiation. The den sity at surface potentials near 0.7 and 0.4 eV was shown to increase b y a ratio of 2:1 for many kinds of stresses and at a ratio of 1:2 for other kinds of stresses. The ratio of p-type to n-type minority carrie r recombination Lifetimes was found to decrease by 2:1 for many plasma processes, while for other plasma processes the ratio was 1:2. These ratios of 2:1 and 1:2 may characterize the Si-SiO2 interface.