INVESTIGATION OF PHOTOLUMINESCENCE AND PHOTOCURRENT IN INGAASP INP STRAINED MULTIPLE-QUANTUM-WELL HETEROSTRUCTURES/

Authors
RAISKY OY WANG WB ALFANO RR REYNOLDS CL SWAMINATHAN V
Citation
Oy. Raisky et al., INVESTIGATION OF PHOTOLUMINESCENCE AND PHOTOCURRENT IN INGAASP INP STRAINED MULTIPLE-QUANTUM-WELL HETEROSTRUCTURES/, Journal of applied physics, 81(1), 1997, pp. 394-399
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
81
Issue
1
Year of publication
1997
Pages
394 - 399
Database
ISI
SICI code
0021-8979(1997)81:1<394:IOPAPI>2.0.ZU;2-P
Abstract
Multiple quantum well InGaAsP/InP p-i-n laser heterostructures with di fferent barrier thicknesses have been investigated using photoluminesc ence (PL) and photocurrent (PC) measurements. The observed PL spectrum and peak positions are in good agreement with those obtained from tra nsfer matrix calculations. Comparing the measured quantum well PC with calculated carrier escape rates, the photocurrent changes are found t o be governed by the temperature dependence of the electron escape tim e. (C) 1997 American Institute of Physics.