We have systematically studied the strain dependence of the free-excit
on resonance energies in wurtzite GaN by photoreflectance measurements
using well-characterized samples. The experimental data have been ana
lyzed using the appropriate Hamiltonian for the valence bands in wurtz
ite GaN and determined the values of the crystal field splitting, the
spin-orbit splitting, the shear deformation potential constants, and t
he energy gap in the unstrained crystal. Discussions are given on the
strain dependence of the energy gaps, of the effective masses, and of
the binding energies for the free-exciton ground states as well as on
the valence-band parameters. (C) 1997 American Institute of Physics.