SI3N4 SI/IN0.05GA0.95AS/N-GAAS METAL-INSULATOR-SEMICONDUCTOR DEVICES/

We report a novel metal-insulator-semiconductor (MIS) structure exhibi ting a pseudomorphic In0.05Ga0.95As layer on GaAs with interface state densities in the low 10(11) eV(-1) cm(-2). The structure was grown by a combination of molecular beam epitaxy and chemical vapor deposition methods. The hysteresis and frequency dispersion of the MIS capacitor were lower than 100 mV, some of them as low as 30 mV under a field sw ing of about +/-1.3 MV/cm. The 150-Angstrom-thick In0.05Ga0.95As chann el between Si and GaAs is found to bring about a change in the minorit y carrier recombination behavior of the GaAs channel, in the same way as done by In0.53Ga0.47As channel MIS structures. Self-aligned gate de pletion mode In0.05Ga0.95As metal-insulator-semiconductor field-effect transistors having 3 mu m gate lengths exhibited field-effect bulk mo bility of 1400 cm(2)/V s and transconductances of about 170 mS/mm. (C) 1997 American Institure of Physics.