THE EFFECT OF THE SURFACE FERMI-LEVEL PINNING ON THE PROPERTIES OF DELTA-DOPED SYSTEMS

Electronic potential profile, energy levels, and their respective occu pations are self-consistently calculated for delta-doped semiconductor films, taking into account the charge depleted by the surface, This e ffect is considered by requiring the Fermi level at the surfaces to be at some fixed value relative to the band gap edges. The electron conc entration in the potential well is calculated for different values of the film thickness and of the surface chemical potential. The results show that these calculations can be helpful in determining the Fermi l evel pinning at the surface by fitting Hall concentrations of delta-do ped samples. (C) 1997 American Institute of Physics.