X-RAY-DIFFRACTION STUDY OF QUASIPSEUDOMORPHIC ERSI1.7 LAYERS FORMED BY CHANNELED ION-BEAM SYNTHESIS

ErSi1.7 layers with high crystalline quality (chi(min) of Er is 1.5%) have been formed by 90 keV Er ion implantation to a dose of 1.6X10(17) /cm(2) at 450 degrees C using channeled implantation. The perpendicula r and parallel elastic strain e(perpendicular to)=-0.94%+/-0.02% and e (parallel to)=1.24%+/-0.08% of the heteroepitaxial erbium silicide lay ers have been measured with symmetric and asymmetric x-ray reflections using a double-crystal x-ray diffractometer. The deduced tetragonal d istortion e(T(XRD))=e(parallel to)-e(perpendicular to)=2.18%+/-0.10%, which is consistent with the value e(T(RBS))2.14+/-0.17% deduced from the Rutherford backscattering and channeling measurements. The quasips eudomorphic growth of the epilayer and the stiffness along a and c axe s of the epilayer deduced from the x-ray diffraction are discussed.