HIGHLY ORIENTED LAYERS OF THE 3-DIMENSIONAL SEMICONDUCTOR CDTE ON THE2-DIMENSIONAL LAYERED SEMICONDUCTORS MOTE2 AND WSE2

The II-VI semiconductor CdTe was sequentially deposited onto the (0001 ) van der Waals surfaces of the layered compound semiconductors MoTe2 and WSe2 by molecular beam epitaxy. Growth could only be achieved afte r deposition of a nucleation layer of CdTe at room temperature, After nucleation subsequent deposition steps followed at increased substrate temperatures (T=170-370 degrees C) in order to increase the crystalli ne quality of the films. The deposited films were investigated after e ach growth step by low energy electron diffraction and photoelectron s pectroscopy. The diffraction pattern indicates a facetting of the (111 ) oriented film surfaces. From photoemission data we exclude interface reactions between substrate and film material. Transmission electron microscopy was used to examine the film morphology after the UHV exper iments. The mean diameter of the film crystallites is 200-400 Angstrom . (C) 1996 American Institute of Physics.