A STUDY OF GROWTH AND THE RELAXATION OF ELASTIC STRAIN IN MGO ON FE(001)

The deposition of MgO on the Fe(001) surface at room temperature and a t elevated temperatures has been carried out using molecular beam epit axy (MBE). MgO is observed to grow epitaxially with a 45 degrees rotat ion between the Fe(001) and MgO(001) unit cell axes. The growth mode h as been studied as a function of temperature using reflection high-ene rgy electron diffraction (RHEED), while the chemical and structural ch aracteristics of the MgO film have been studied using Auger electron s pectroscopy and high resolution electron microscopy. The relaxation of the in-plane lattice parameter during growth at room temperature has been measured in situ using RHEED and ex situ using glancing incidence x-ray diffraction and during growth at elevated temperatures by means of RHEED. Pseudomorphic growth is observed up to a thickness of 4-5 m onolayers, after which the in-plane lattice parameter starts to evolve towards the MgO bulk parameter as 1/2[011] misfit dislocations are in troduced at the Fe/MgO interface. The degree of relaxation as a functi on of epilayer thickness is compared with that expected for an equilib rium dislocation spacing in an array of dislocations of alternating or ientation, and with that predicted by Freund's criterion for the block ing of a threading segment by an orthogonal misfit dislocation [J. App l. Phys. 68, 2073 (1990)]. (C) 1996 American Institute of Physics.