LOCAL ACTIVATION-ENERGY AND SHAPE FACTOR OF CURRENT-VOLTAGE CURVE AS INVESTIGATION TOOLS FOR SEMICONDUCTOR BARRIER STRUCTURES

Authors
POPESCU C APETZ R VESCAN L
Citation
C. Popescu et al., LOCAL ACTIVATION-ENERGY AND SHAPE FACTOR OF CURRENT-VOLTAGE CURVE AS INVESTIGATION TOOLS FOR SEMICONDUCTOR BARRIER STRUCTURES, Journal of applied physics, 80(10), 1996, pp. 5791-5798
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
80
Issue
10
Year of publication
1996
Pages
5791 - 5798
Database
ISI
SICI code
0021-8979(1996)80:10<5791:LAASFO>2.0.ZU;2-3
Abstract
Modeling of the I(V,T) dependence in thin film semiconductor structure s suggests that experimental data, on temperature and voltage dependen t activation energy and shape factor of the current, give significant information on the recombination process within the structure. Grounds are thus laid for further investigation on quantum well effects withi n such structures. (C) 1996 American Institute of Physics.