FAR-INFRARED INTERSUBBAND TRANSITIONS IN A 2-DIMENSIONAL GAAS (AL,GA)AS HOLE SYSTEM - DIRECT COMPARISON OF EXPERIMENT AND CALCULATION/

Authors
COLE BE CHAMBERLAIN JM HENINI M NAKOV V GOBSCH G
Citation
Be. Cole et al., FAR-INFRARED INTERSUBBAND TRANSITIONS IN A 2-DIMENSIONAL GAAS (AL,GA)AS HOLE SYSTEM - DIRECT COMPARISON OF EXPERIMENT AND CALCULATION/, Journal of applied physics, 80(10), 1996, pp. 6058-6060
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
80
Issue
10
Year of publication
1996
Pages
6058 - 6060
Database
ISI
SICI code
0021-8979(1996)80:10<6058:FITIA2>2.0.ZU;2-2
Abstract
Measured far-infrared (FIR) intersubband absorption in two p-type modu lation-doped GaAs/(Al,Ga)As multiquantum wells is compared with k . p modeling of the two-dimensional heavy- and light-hole (HH, LH) subband structure. Strong absorption for both HH1-HH2 and HH1-LH1 transitions is found. Self-consistent modeling was performed within a 4X4 k . p s cheme for heavy and light holes. There is an excellent agreement betwe en the theoretical and experimental FIR intersubband transitions at k( parallel to)=0 and at the Fermi wave vector k(f). (C) 1996 American In stitute of Physics.