HIGH-RESOLUTION ELECTRON-MICROSCOPY STUDY OF NICKEL SILICIDE - SILICON INTERFACE GROWN BY MOLECULAR-BEAM EPITAXY

Authors
FENG YZ WU ZQ
Citation
Yz. Feng et Zq. Wu, HIGH-RESOLUTION ELECTRON-MICROSCOPY STUDY OF NICKEL SILICIDE - SILICON INTERFACE GROWN BY MOLECULAR-BEAM EPITAXY, Journal of materials science letters, 15(22), 1996, pp. 2000-2001
Citations number
12
Categorie Soggetti
Material Science
Journal title
Journal of materials science letters → ACNP
ISSN journal
02618028
Volume
15
Issue
22
Year of publication
1996
Pages
2000 - 2001
Database
ISI
SICI code
0261-8028(1996)15:22<2000:HESONS>2.0.ZU;2-0