SIMULTANEOUS DOPANT DIFFUSION AND SURFACE PASSIVATION IN A SINGLE RAPID THERMAL CYCLE

In this work, we present results on simultaneous formation of emitter/ backsurface field or emitter/surface passivation in a single rapid the rmal cycle, We have investigated the diffusion kinetics of dopant elem ents like phosphorus, boron (from a doped spin-on glass (SOD) film), a luminium (from evaporated films) or aluminium-boron (from an Al-B SOD film), In particular, we have shown that rapid thermal co-diffusion of P and Al (or AI-B) leads to low sheet resistances, optical emitter pr ofiles and a high gettering effect. Furthermore, the possibility of us ing the remaining SOD films as a surface passivation layer was investi gated, Dark saturation current measurements as deduced from the photoc onductivity decay technique demonstrate the passivation effect of the remaining SOD film, The highest efficiency of 12.8% obtained was achie ved on SOD oxide-coated solar cells.