RESONANT-TUNNELING BIPOLAR-TRANSISTORS WITH A QUANTUM-WELL BASE

Heterostructure bipolar transistors with a quantum-well base incorpora ted a resonant-tunneling structure in the collector are proposed and s tudied theoretically. Static characteristics of the transistors are ev aluated using the proposed analytical model. It is shown that the curr ent-voltage characteristics and the collector current versus base curr ent dependences can be ambiguous corresponding to bistability operatio n. The bistability effect is associated with the mobile electron space charge in the collector region. Direct on-off switching by the collec tor voltage or base current pulses is discussed.