Hole and electron mobilities have been measured in vapor deposited lay
ers of dimethylpropyl)-1,4,5,8-naphthalenetetracarboxylic diimide (TAN
D). The TAND molecule contains a naphthalene diimide acceptor function
ality and a triarylamine donor functionality. The mobilities are of co
mparable magnitude and show similar held and temperature dependencies.
The results are described within the framework of a formalism based o
n disorder. The formalism is premised on the assumption that charge tr
ansport occurs by hopping through a manifold of localized states with
superimposed energetic disorder. The key parameter of the formalism is
the energy width of the hopping site manifold. For TAND, the widths a
re 0.110 and 0.091 eV for hole and electron transport, respectively. T
he result leads to the conclusion that the hole and electron transport
manifolds are independent and not influenced by the transport states
of the oppositely charged carriers.