EFFECT OF ATOMIC LAYER EPITAXY GROWTH-CONDITIONS ON THE PROPERTIES OFZNS EPILAYERS ON (100)-SI SUBSTRATE

Authors
LIU CH YOKOYAMA M SU YK
Citation
Ch. Liu et al., EFFECT OF ATOMIC LAYER EPITAXY GROWTH-CONDITIONS ON THE PROPERTIES OFZNS EPILAYERS ON (100)-SI SUBSTRATE, JPN J A P 1, 35(10), 1996, pp. 5416-5420
Citations number
26
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
35
Issue
10
Year of publication
1996
Pages
5416 - 5420
Database
ISI
SICI code
Abstract
ZnS films have been grown on (100)-Si substrate in atomic layer epitax y (ALE) mode using DMZn and H2S as source materials. The growth rate w as 0.7 monolayer per cycle, independent of substrate temperature in th e range 125 degrees C to 225 degrees C. Under optimum growth condition s, ZnS lavers grown in ALE mode showed good surface morphology. In pho toluminescence (PL) spectra, a sharp peak at 337 nm was observed at ro om temperature, which was attributed to band-to-band emission.