SELECTIVE GENERATION OF DEFECTS IN POLYDIACETYLENE LANGMUIR-BLODGETT-FILMS ON SI SUBSTRATES AS STUDIED BY X-RAY PHOTOELECTRON-SPECTROSCOPY

The defects in Langmuir-Blodgett films formed on Silicon substrates at the early stages of the accumulation process were studied by X-ray ph otoelectron spectroscopy for the first time. It was found that the def ects are generated even in the first monolayer, especially on the thic kly oxidized area and that the defects due to molecular elimination ar e generated selectively on the thickly oxidized area when the second l ayer is accumulated on the first layer. From this study, inelstic mean free paths of low-energy electrons in polymer material were also obta ined, which are valuable for the analyses of their trajectories.