RESISTANCE TO CYCLIC FATIGUE OF SILICON-CARBIDE CERAMICS AT AMBIENT AND ELEVATED-TEMPERATURES

Authors
RITCHIE RO GILBERT CJ
Citation
Ro. Ritchie et Cj. Gilbert, RESISTANCE TO CYCLIC FATIGUE OF SILICON-CARBIDE CERAMICS AT AMBIENT AND ELEVATED-TEMPERATURES, Anales de la Asociacion Quimica Argentina, 83(6), 1995, pp. 307-315
Citations number
21
Categorie Soggetti
Chemistry
Journal title
Anales de la Asociacion Quimica Argentina → ACNP
ISSN journal
03650375
Volume
83
Issue
6
Year of publication
1995
Pages
307 - 315
Database
ISI
SICI code
0365-0375(1995)83:6<307:RTCFOS>2.0.ZU;2-2
Abstract
Mechanisms governing the fracture toughness and fatigue-crack growth p roperties of new, in situ toughened silicon carbide ceramic, with Al, B and C additives, are examined at both ambient and elevated temperatu res (22-1200 degrees C). Compared to behavior in commercial SiC (Hexol oy SA), his material displays over a three-fold increase in toughness (Kc greater than or equal to 9 MPa root m), but is susceptible to cycl ic fatigue failure. It is shown that whereas grain bridging that is re sponsible for cyclic fatigue failure.