P. De et Bc. Paul, AN OPTIMUM DESIGN GUIDE TO LOW-HIGH-LOW DDR SI IMPATT DIODE FOR (80-150) GHZ BAND, Indian Journal of Pure & Applied Physics, 34(12), 1996, pp. 1000-1002
The de properties of silicon double drift region Impatt diodes for the
low-high-low (n(++)nn(+)npp(+)pp(++)) structures have been optimized
first by varying the high bias current density and then further by mod
ifying the doping concentrations for the minimization of avalanche reg
ion width, punch through factor and optimization of power in the 80-15
0 GHz band. The computed results show that narrow avalanche region, mi
nimum space charge effect and high efficiency diodes can be fabricated
using appropriate doping profile at an optimum current density rather
than increasing the bias current density which causes the space charg
e effect.