INFLUENCE OF HYDROSTATIC-PRESSURE ON THE DIFFUSION OF HYDROGEN IN N-GAAS-SI

Hydrogen diffusion experiments have been performed in buried silicon d oped GaAs epilayers under hydrostatic pressure. The deuterium diffusio n profile in n-GaAs:Si depends on the hydrostatic pressure: a plateau followed by a steep decrease progressively appears as the pressure is increased. This has been interpreted as being due to the increasing im portance of the trapping-detrapping process of H- on Si+ donors during the hydrogen diffusion. This increase has been attributed to a deepen ing of the hydrogen acceptor level with respect to the bottom of the G amma conduction band of GaAs as the hydrostatic pressure increases. Co pyright (C) 1996 Published by Elsevier Science Ltd