FINAL-STATE-INTERACTIONS IN THE INFRARED-ABSORPTION OF DOPED SEMICONDUCTORS

We calculate the profile of the infrared inter-valence-band absorption in p-doped non-polar semiconductor as modified by the final-state int eraction of electronic excitations with optical phonons. The absorptio n coefficient vanishes at a light frequency equal to the frequency of the non-polar optical vibrations. The spectrum is asymmetric with resp ect to the absorption minimum. We show that the type of asymmetry depe nds on the position of the optical phonon energy relative to the elect ronic continuum. The results are compared to available data for p-dope d Si. Copyright (C) 1996 Elsevier Science Ltd