CONDUCTANCE OSCILLATIONS IN A DEFORMABLE QUANTUM RING

Citation
Sh. Yang et al., CONDUCTANCE OSCILLATIONS IN A DEFORMABLE QUANTUM RING, Solid state communications, 100(12), 1996, pp. 845-849
Citations number
18
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
00381098
Volume
100
Issue
12
Year of publication
1996
Pages
845 - 849
Database
ISI
SICI code
0038-1098(1996)100:12<845:COIADQ>2.0.ZU;2-K
Abstract
Low temperature magnetoconductance oscillation measurements are report ed for a deformable quantum ring. The quantum ring is formed from a tw o-dimensional electron gas in a GaAs/Al0.3Ga0.7As heterostructure via electrostatic gates: outside gates define the outer perimeter with two quantum point contacts and a separately contacted center gate forms a central hole with adjustable size. Three lithography layers, aligned to 50 nm precision, were required to achieve independent contact to th e center gate. Series of magneto-oscillation power spectra for increas ing size of the central hole show two sets of peaks: one at essentiall y constant magnetic frequency corresponding to the area enclosed by th e outer circumference as for edge-state interference and one which shi fts to lower frequency corresponding to the area of the electron ring. Copyright (C) 1996 Elsevier Science Ltd