MONITORING OF ATOMIC LAYER DEPOSITION BY INCREMENTAL DIELECTRIC REFLECTION

Citation
A. Rosental et al., MONITORING OF ATOMIC LAYER DEPOSITION BY INCREMENTAL DIELECTRIC REFLECTION, Applied surface science, 107, 1996, pp. 178-183
Citations number
11
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
ISSN journal
01694332
Volume
107
Year of publication
1996
Pages
178 - 183
Database
ISI
SICI code
0169-4332(1996)107:<178:MOALDB>2.0.ZU;2-C
Abstract
An optical method for in situ diagnostics of atomic layer deposition, hosed on the measuring of the reflectivity of a F-polarized light in f ully transparent systems, is proposed and analyzed by using a classica l four-phase approximation. The method is applied to the monitoring of TiO2 growth. It is shown;hot the sensitivity of the method is high if one uses the angles of incidence close to the Brewster angle of the s ubstrate. The method is called incremental dielectric reflection.