An optical method for in situ diagnostics of atomic layer deposition,
hosed on the measuring of the reflectivity of a F-polarized light in f
ully transparent systems, is proposed and analyzed by using a classica
l four-phase approximation. The method is applied to the monitoring of
TiO2 growth. It is shown;hot the sensitivity of the method is high if
one uses the angles of incidence close to the Brewster angle of the s
ubstrate. The method is called incremental dielectric reflection.