INPLANE PHOTOCONDUCTIVITY OF INAS GAAS STRAINED-LAYER STRUCTURES PREPARED ON VARIOUSLY ORIENTED GAAS SUBSTRATES/

Authors
SHIMA T YAMAMOTO E KUNIYOSHI S KUDO K TANAKA K KIMURA S OBARA A MAKITA Y
Citation
T. Shima et al., INPLANE PHOTOCONDUCTIVITY OF INAS GAAS STRAINED-LAYER STRUCTURES PREPARED ON VARIOUSLY ORIENTED GAAS SUBSTRATES/, Applied surface science, 107, 1996, pp. 233-237
Citations number
10
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
107
Year of publication
1996
Pages
233 - 237
Database
ISI
SICI code
0169-4332(1996)107:<233:IPOIGS>2.0.ZU;2-7
Abstract
Photoconductivity (PC) measurements were employed to investigate the p hotoelectric properties of InAs/GaAs strained-layer structure grown on GaAs (100), (311)A and (111)A substrates. PC results of the sample gr own on GaAs (311)A and (111)A substrates showed specific PC signals at lower energy region (around 1.2 eV) from GaAs band-edge. From transie nt PC measurement varying the sample temperature, activation energies of around 0.19 eV were obtained for the sample grown on (311)A substra te with 1 monolayer of InAs. These activation energies suggest the exi stence of relatively thick InAs region that are locally formed and/or specific defects formed in the samples grown on highly oriented substr ates.