An atomic layer epitaxy (ALE) module has been developed that can be at
tached to a port of UHV surface analysis equipment. In our case this w
ould, for instance, enable analysis by low energy ion scattering (LEIS
), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy
(AFM). This so-called mini-ALE will be used to study and optimize the
growth mechanisms of mono-atomic and sub-monatomic metal layers and t
o prepare model samples for studies of catalysts and small metal clust
ers. The mini-ALE basically consists of a small (approximate to 1 cm(3
)) growth chamber suspended in an UHV environment, with valved inlets
for the reaction and purge gases. The sample can be transferred to the
analysis chamber via a load-lock. The surface temperature of the samp
le can be controlled from room temperature to approximately 500 degree
s C. The system was tested by attaching it to one of our LEIS set-ups
and growing CuO on Al2O3, using Cu(acac)(2) and artificial air as reac
tants. Cu growth was observed, covering about 3% of the surface. Resul
ts on growth as a function of surface temperature are given.